i28F320B: 64*64K,64个blocks,4M空间,每个block 64K,第一个64K由8个8*8K小blocks组成.每个Black可以被独立擦写(寿命周期) 100,000次以上

    Flash操作的大概步骤:

       flash读写操作中,读应该很简单,和RAM一样,写就复杂一点.
       Intel TE28F320C3的flash是4M空间
       flash空间,划分成许多的block,Intel TE28F320C3的flash是4M空间,64个block,每个block由64K.
       要对所有的block单独进行操作, 每个操作结束,都需要判断状态,
       每个block操作的大概步骤如下:
            1.unlock
            2.erase
            3.check empty
            所有的block完成上述操作,且状态正确,才能进行下一步,写
            4.write

        ARM汇编程序

             LDR r2, =FlashBase                     ;Flash起始地址

        //第一步,UNLOCK的64个block,步骤和上边一样

                  MOV r1,#63                       ;63x64k block 计数

        01     LDRB   r3, =X16_FLASH_COMMAND_CONFIG_SETUP

                  STRB          r3, [r2]           ;该block的首地址 

                  LDRB          r3, =X16_FLASH_COMMAND_UNLOCK_BLOCK

                  STRB          r3, [r2]           ;将Unlock命令写入

                  ADD r2, r2, #0x10000             ;64K
                  SUBS          r1, r1, #1
                  BNE %b01                           
        ;Unlock OK                                 ;Unlock 完成

        //第二布,擦除blocks

                LDR         r0, =FlashBase
                LDR         r1,=63                       ;擦除 63x64k block
        01    LDR     r3, =X16_FLASH_COMMAND_ERASE
                LDR     r2, =X16_FLASH_COMMAND_CONFIRM  
                ORR         r3, r3, r2, LSL #16
                STR         r3, [r0]
                LDR     r3, =X16_FLASH_COMMAND_STATUS ;检查寄存器状态
                STRB    r3, [r0]
        02    LDRB    r3, [r0]                              ;读状态
                TST         r3, #X16_FLASH_STATUS_READY
                BEQ     %b02                          ;若状态ready,执行下一个  
                TST     r3, #X16_FLASH_STATUS_ERROR
                BNE     error_erase_block
                ADD         r0, r0, #0x10000
                SUBS    r1, r1, #1
                BNE         %b01
                B         EraseOK
        error_erase_block
        ..............
        ;EraseOK                               ;擦除完成

        //第三步,检查flash是否为空

        ;Check Flash Empty
                LDR         r4, =FlashBase
                LDR         r5, =0x100000                    ;检查 1MB
                LDR         r0, =0xffffffff
        loop_1
                LDR         r1, [r4]
                CMP         r1, r0                     ;比较地址内容和0xffffffff
                BNE         empty_error
               ADD         r4, r4, #4
                CMP         r4, r5
                BLO         loop_1
                B         CheckOK
        empty_error
        .................
        CheckOK
        .................

        ;Check empty OK                        ;检查完成 

        //第四步,写flash

        ;Burn data to Flash ROM

                LDR         r6, =Length_Flash           ;定义数据长度
                LDR         r0, =FlashBase
                LDR         r1, =BufferBase
                MOV         r9, #0
                LDR         r4,=0x10000000
                LDR         r7,=0xc0001000
                STR         r4,    [r7]
                LDR         r1, [r1, r9]

        03    LDR     r3, =X16_FLASH_COMMAND_WRITE
                STRB    r3, [r0]                                         ;把写命令放入Block首地址
               LDR     r3, =X16_FLASH_COMMAND_STATUS  
                LDR         r2, [r7]                                         
                LDR         r5, =0x0000ffff           
                AND         r2, r2, r5
                ORR         r2, r2, r3, LSL #16
                STR         r2, [r0]       
        02    LDR         r3, [r0]                                 ;读状态寄存器状态
                TST         r3, #X16_FLASH_STATUS_READY  
                BEQ     %b02                          ;若状态ready,执行下一个

                LDR     r3, =X16_FLASH_COMMAND_WRITE
                LDR         r2, [r7]           
                LDR         r5, =0xffff0000                             ;
                AND         r2, r2, r5
                ORR         r3, r3, r2
                STR         r3, [r0]

                LDR     r3, =X16_FLASH_COMMAND_STATUS
                STRB    r3, [r0]           
        02    LDR         r3, [r0]                             ; read status
                TST         r3, #X16_FLASH_STATUS_READY
                BEQ     %b02

                LDR     r4, =X16_FLASH_COMMAND_READ
                STRB    r4, [r0]
                ADD         r0, r0, #4
                LDR         r8, [r7]
                ADD         r8, r8,#1
                STR         r8, [r7]
                ADD         r8, r8, #4
        writenext

                SUBS     r6, r6, #4         ;if no finished goto 03
                BHI         %b03
                TST     r3, #X16_FLASH_STATUS_ERROR
                BNE     error_write
                LDR     r3, =X16_FLASH_COMMAND_READ
                STRB    r3, [r0]
                B         BurnOK
        error_write
            ..........
        BurnOK